IEC 60747-9 Ed. 3.0 b PDF

$235.00

Semiconductor devices – Part 9: Discrete devices – Insulated-gate bipolar transistors (IGBTs)

Published by Publication Date Number of Pages
IEC 11/13/2019 160
PDF FormatPDF FormatMulti-User-AccessMulti-User AccessPrintablePrintableOnline downloadOnline Download
Category:

Description

IEC 60747-9 Ed. 3.0 b – Semiconductor devices – Part 9: Discrete devices – Insulated-gate bipolar transistors (IGBTs)

IEC 60747-9 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs). The major changes with respect to the previous edition are mainly of an editorial nature.

Product Details

Edition:
3.0
Published:
11/13/2019
Number of Pages:
160
File Size:
1 file , 4 MB
Note:
This product is unavailable in Ukraine, Russia, Belarus