This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.7 for JANHC and JANKC die versions. Provisions for radiation hardness assurance (RHA) to four radiation levels (“R”, “F”, “G” and “H”) are provided for JANTXV and JANS product assurance levels.
Product Details
- Published:
- 02/26/2014
- Number of Pages:
- 23
- File Size:
- 1 file , 260 KB
- Note:
- This product is unavailable in Ukraine, Russia, Belarus