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Semiconductor Device, Field Effect Radiation Hardened Transistor, N-Channel, Silicon, Types 2N7491T2, 2N7492T2, and 2N7493T2, JANTXVR, F, G, and H and JANSR, F, G, and H standard by Military Specifications and Standards, 01/27/2014
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).
Product Details
Published:
01/27/2014
Number of Pages:
23
File Size:
1 file , 260 KB
Note:
This product is unavailable in Ukraine, Russia, Belarus
