IEC 63068-3 Ed. 1.0 b PDF

Description

IEC 63068-3 Ed. 1.0 b – Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices – Part 3: Test method for defects using photoluminescence

IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.

Product Details

Edition:

1.0

Published:

07/13/2020

Number of Pages:

51

File Size:

1 file , 2.5 MB

Note:

This product is unavailable in Ukraine, Russia, Belarus