IEC 63068-2 Ed. 1.0 en PDF

Description

IEC 63068-2 Ed. 1.0 en – Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices – Part 2: Test method for defects using optical inspection

IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.

Product Details

Edition:

1.0

Published:

01/30/2019

Number of Pages:

25

File Size:

1 file , 3 MB

Note:

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