IEC 63068-2 Ed. 1.0 en PDF
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Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices – Part 2: Test method for defects using optical inspection
| Published by | Publication Date | Number of Pages |
| IEC | 01/30/2019 | 25 |
IEC 63068-2 Ed. 1.0 en – Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices – Part 2: Test method for defects using optical inspection
IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.
Product Details
- Edition:
- 1.0
- Published:
- 01/30/2019
- Number of Pages:
- 25
- File Size:
- 1 file , 3 MB
- Note:
- This product is unavailable in Ukraine, Russia, Belarus
