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Semiconductor devices – Discrete devices – Part 9: Insulated-gate bipolar transistors (IGBTs) CONSOLIDATED EDITION standard by International Electrotechnical Commission, 11/20/2001
Gives product specific standards for terminology, letter symbols, essential ratings and characteristics and measuring methods for insulated-gate bipolar transistors (IGBTs). This consolidated version consists of the first edition (1998) and its amendment 1 (2001). Therefore, no need to order amendment in addition to this publication.
Product Details
Edition:
1.1
Published:
11/20/2001
Number of Pages:
131
File Size:
1 file , 1.1 MB
Note:
This product is unavailable in Ukraine, Russia, Belarus
