Name: ASTM F996 PDF - Engineering Standards Download
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ASTM F996 PDF

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Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics

Published by	Publication Date	Number of Pages
ASTM	03/01/2018	7

Category: ASTM

Description

ASTM F996 – Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics

1.1 This test method covers the use of the subthreshold charge separation technique for analysis of ionizing radiation degradation of a gate dielectric in a metal-oxide-semiconductor-field-effect transistor (MOSFET) and an isolation dielectric in a parasitic MOSFET.2^,3^,4 The subthreshold technique is used to separate the ionizing radiation-induced inversion voltage shift, ΔV_INV into voltage shifts due to oxide trapped charge, ΔV_ot and interface traps, ΔV _it. This technique uses the pre- and post-irradiation drain to source current versus gate voltage characteristics in the MOSFET subthreshold region.