Semiconductor devices – Micro-electromechanical devices – Part 9: Wafer to wafer bonding strength measurement for MEMS

Published by	Publication Date	Number of Pages
IEC	07/13/2011	49

Category: IEC

Description

IEC 62047-9 Ed. 1.0 b – Semiconductor devices – Micro-electromechanical devices – Part 9: Wafer to wafer bonding strength measurement for MEMS

IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ohmm to several millimeters.